FDMC3020DC Datasheet. Specs and Replacement

Type Designator: FDMC3020DC  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm

Package: POWER33

FDMC3020DC substitution

- MOSFET ⓘ Cross-Reference Search

 

FDMC3020DC datasheet

 ..1. Size:446K  fairchild semi
 fdmc3020dc.pdf pdf_icon

FDMC3020DC

October 2010 FDMC3020DC N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 6.25 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 6.25 m at VGS = 10 V, ID = 12 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 9.0 m a... See More ⇒

 9.1. Size:253K  1
 fdmc3612.pdf pdf_icon

FDMC3020DC

FDMC3612 General Description N-Channel Power Trench MOSFET This N-Channel MOSFET is produced using ON Semiconductor s advanced Power Trench process that has 100 V, 12 A, 110 m been especially tailored to minimize the on-state resistance and Features yet maintain superior switching performance. Max rDS(on) = 110 m at VGS = 10 V, ID = 3.3 A Max rDS(on) = 122 m at VGS = ... See More ⇒

 9.2. Size:346K  fairchild semi
 fdmc3612.pdf pdf_icon

FDMC3020DC

August 2010 FDMC3612 N-Channel Power Trench MOSFET 100 V, 12 A, 110 m Features General Description Max rDS(on) = 110 m at VGS = 10 V, ID = 3.3 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 122 m at VGS = 6 V, ID = 3.0 A been especially tailored to minimize the on-state resistance and Low Profi... See More ⇒

 9.3. Size:253K  onsemi
 fdmc3612.pdf pdf_icon

FDMC3020DC

FDMC3612 General Description N-Channel Power Trench MOSFET This N-Channel MOSFET is produced using ON Semiconductor s advanced Power Trench process that has 100 V, 12 A, 110 m been especially tailored to minimize the on-state resistance and Features yet maintain superior switching performance. Max rDS(on) = 110 m at VGS = 10 V, ID = 3.3 A Max rDS(on) = 122 m at VGS = ... See More ⇒

SHOW MORE

Detailed specifications: FDMB668P, FDMC15N06, FDMC2512SDC, FDMC2514SDC, FDMC2523P, FDMC2610, STS2620, FDMC2674, SI2302, STS2601, FDMC3612, STS2309A, FDMC4435BZ, FDMC510P, FDMC5614P, FDMC6296, STS2308A

Keywords - FDMC3020DC MOSFET specs

 FDMC3020DC cross reference

 FDMC3020DC equivalent finder

 FDMC3020DC pdf lookup

 FDMC3020DC substitution

 FDMC3020DC replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility