FDMC3020DC
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDMC3020DC
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 40
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 15.5
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0063
Ohm
Package:
POWER33
FDMC3020DC
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDMC3020DC
Datasheet (PDF)
..1. Size:446K fairchild semi
fdmc3020dc.pdf 
October 2010FDMC3020DCN-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 6.25 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 6.25 m at VGS = 10 V, ID = 12 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 9.0 m a
9.1. Size:253K 1
fdmc3612.pdf
FDMC3612General DescriptionN-Channel Power Trench MOSFETThis N-Channel MOSFET is produced using ON Semiconductors advanced Power Trench process that has 100 V, 12 A, 110 mbeen especially tailored to minimize the on-state resistance and Featuresyet maintain superior switching performance. Max rDS(on) = 110 m at VGS = 10 V, ID = 3.3 A Max rDS(on) = 122 m at VGS =
9.2. Size:346K fairchild semi
fdmc3612.pdf
August 2010FDMC3612N-Channel Power Trench MOSFET 100 V, 12 A, 110 mFeatures General Description Max rDS(on) = 110 m at VGS = 10 V, ID = 3.3 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 122 m at VGS = 6 V, ID = 3.0 Abeen especially tailored to minimize the on-state resistance and Low Profi
9.3. Size:253K onsemi
fdmc3612.pdf
FDMC3612General DescriptionN-Channel Power Trench MOSFETThis N-Channel MOSFET is produced using ON Semiconductors advanced Power Trench process that has 100 V, 12 A, 110 mbeen especially tailored to minimize the on-state resistance and Featuresyet maintain superior switching performance. Max rDS(on) = 110 m at VGS = 10 V, ID = 3.3 A Max rDS(on) = 122 m at VGS =
9.4. Size:2394K kexin
fdmc3612.pdf
SMD Type MOSFETN-Channel MOSFETFDMC3612 (KDMC3612)DFN 3X3 FeaturesTop VDS (V) = 100V8 7 6 5 ID = 12A RDS(ON) 110m (VGS = 10V) RDS(ON) 122m (VGS = 6V) Low Profile - 1 mm max in Power 33BottomD D DD1 2 3 4D 5 4 GD 6 3 SD 7 2 SD 8 1 SG S S S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Sour
Datasheet: FDMB668P
, FDMC15N06
, FDMC2512SDC
, FDMC2514SDC
, FDMC2523P
, FDMC2610
, STS2620
, FDMC2674
, STF13NM60N
, STS2601
, FDMC3612
, STS2309A
, FDMC4435BZ
, FDMC510P
, FDMC5614P
, FDMC6296
, STS2308A
.
