HM40N10KA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM40N10KA 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 140 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 40 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 290 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm
Encapsulados: TO252
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HM40N10KA datasheet
hm40n10ka.pdf
HM40N10KA N-Channel Enhancement Mode Power MOSFET Description The HM40N10KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)
hm40n10k.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)
hm40n10.pdf
HM40N10 N-Channel Enhancement Mode Power MOSFET Description The HM40N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)
hm40n15ka.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)
Otros transistores... HM3P10MR, HM4030, HM4030D, HM40N04D, HM40N04K, HM40N06D, HM40N10, HM40N10K, 5N60, HM40N15K, HM40N15KA, HM40N20, HM40N20D, HM40P04K, HM40P06K, HM4110, HM4110T
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