Справочник MOSFET. HM40N10KA

 

HM40N10KA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: HM40N10KA

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 140 W

Предельно допустимое напряжение сток-исток |Uds|: 100 V

Предельно допустимое напряжение затвор-исток |Ugs|: 20 V

Пороговое напряжение включения |Ugs(th)|: 1.5 V

Максимально допустимый постоянный ток стока |Id|: 40 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 94 nC

Время нарастания (tr): 11 ns

Выходная емкость (Cd): 290 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.017 Ohm

Тип корпуса: TO252

Аналог (замена) для HM40N10KA

 

 

HM40N10KA Datasheet (PDF)

..1. hm40n10ka.pdf Size:608K _cn_hmsemi

HM40N10KA HM40N10KA

HM40N10KAN-Channel Enhancement Mode Power MOSFET Description The HM40N10KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)

6.1. hm40n10k.pdf Size:534K _cn_hmsemi

HM40N10KA HM40N10KA

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)

7.1. hm40n10.pdf Size:798K _cn_hmsemi

HM40N10KA HM40N10KA

HM40N10 N-Channel Enhancement Mode Power MOSFET Description The HM40N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)

 8.1. hm40n15k.pdf Size:511K _cn_hmsemi

HM40N10KA HM40N10KA

HM40N15K N-Channel Enhancement Mode Power MOSFET Description The HM40N15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)

8.2. hm40n15ka.pdf Size:608K _cn_hmsemi

HM40N10KA HM40N10KA

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)

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