Справочник MOSFET. HM40N10KA

 

HM40N10KA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HM40N10KA
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 140 W
   Предельно допустимое напряжение сток-исток |Uds|: 100 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 1.5 V
   Максимально допустимый постоянный ток стока |Id|: 40 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 94 nC
   Время нарастания (tr): 11 ns
   Выходная емкость (Cd): 290 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.017 Ohm
   Тип корпуса: TO252

 Аналог (замена) для HM40N10KA

 

 

HM40N10KA Datasheet (PDF)

 ..1. Size:608K  cn hmsemi
 hm40n10ka.pdf

HM40N10KA HM40N10KA

HM40N10KAN-Channel Enhancement Mode Power MOSFET Description The HM40N10KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)

 6.1. Size:534K  cn hmsemi
 hm40n10k.pdf

HM40N10KA HM40N10KA

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)

 7.1. Size:798K  cn hmsemi
 hm40n10.pdf

HM40N10KA HM40N10KA

HM40N10 N-Channel Enhancement Mode Power MOSFET Description The HM40N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)

 8.1. Size:608K  cn hmsemi
 hm40n15ka.pdf

HM40N10KA HM40N10KA

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)

 8.2. Size:511K  cn hmsemi
 hm40n15k.pdf

HM40N10KA HM40N10KA

HM40N15K N-Channel Enhancement Mode Power MOSFET Description The HM40N15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)

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