All MOSFET. HM40N10KA Datasheet

 

HM40N10KA MOSFET. Datasheet pdf. Equivalent

Type Designator: HM40N10KA

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 140 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.5 V

Maximum Drain Current |Id|: 40 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 94 nC

Rise Time (tr): 11 nS

Drain-Source Capacitance (Cd): 290 pF

Maximum Drain-Source On-State Resistance (Rds): 0.017 Ohm

Package: TO252

HM40N10KA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM40N10KA Datasheet (PDF)

 ..1. Size:608K  cn hmsemi
 hm40n10ka.pdf

HM40N10KA HM40N10KA

HM40N10KAN-Channel Enhancement Mode Power MOSFET Description The HM40N10KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)

 6.1. Size:534K  cn hmsemi
 hm40n10k.pdf

HM40N10KA HM40N10KA

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)

 7.1. Size:798K  cn hmsemi
 hm40n10.pdf

HM40N10KA HM40N10KA

HM40N10 N-Channel Enhancement Mode Power MOSFET Description The HM40N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)

 8.1. Size:511K  cn hmsemi
 hm40n15k.pdf

HM40N10KA HM40N10KA

HM40N15K N-Channel Enhancement Mode Power MOSFET Description The HM40N15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)

 8.2. Size:608K  cn hmsemi
 hm40n15ka.pdf

HM40N10KA HM40N10KA

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 18N50 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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