HM40N10KA Datasheet. Specs and Replacement

Type Designator: HM40N10KA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 140 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 290 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: TO252

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HM40N10KA datasheet

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HM40N10KA

HM40N10KA N-Channel Enhancement Mode Power MOSFET Description The HM40N10KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON) ... See More ⇒

 6.1. Size:534K  cn hmsemi
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HM40N10KA

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON) ... See More ⇒

 7.1. Size:798K  cn hmsemi
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HM40N10KA

HM40N10 N-Channel Enhancement Mode Power MOSFET Description The HM40N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON) ... See More ⇒

 8.1. Size:608K  cn hmsemi
 hm40n15ka.pdf pdf_icon

HM40N10KA

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON) ... See More ⇒

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Detailed specifications: HM3P10MR, HM4030, HM4030D, HM40N04D, HM40N04K, HM40N06D, HM40N10, HM40N10K, TK10A60D, HM40N15K, HM40N15KA, HM40N20, HM40N20D, HM40P04K, HM40P06K, HM4110, HM4110T

Keywords - HM40N10KA MOSFET specs

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