HM40N20 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM40N20
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 220 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 40 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 24 nS
Cossⓘ - Capacitancia de salida: 290 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.041 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de HM40N20 MOSFET
HM40N20 datasheet
hm40n20.pdf
HM40N20 N-Channel Enhancement Mode Power MOSFET Description The HM40N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =40A RDS(ON)
hm40n20d.pdf
HM40N20D N-Channel Enhancement Mode Power MOSFET Description The HM40N20D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =40A RDS(ON)
hm40n04k.pdf
HM40N04K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM40N04K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =40V,ID =40A RDS(ON)
hm40n06d.pdf
HM40N06D N-Channel Enhancement Mode Power MOSFET Description The HM40N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =40A RDS(ON)
Otros transistores... HM40N04D , HM40N04K , HM40N06D , HM40N10 , HM40N10K , HM40N10KA , HM40N15K , HM40N15KA , AO3407 , HM40N20D , HM40P04K , HM40P06K , HM4110 , HM4110T , HM4240 , HM4260 , HM4264 .
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