HM40N20 Datasheet. Equivalente

 ..1. Size:512K  cn hmsemi
 hm40n20.pdf

HM40N20 N-Channel Enhancement Mode Power MOSFET Description The HM40N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =40A RDS(ON)

 0.1. Size:599K  cn hmsemi
 hm40n20d.pdf

HM40N20D N-Channel Enhancement Mode Power MOSFET Description The HM40N20D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =40A RDS(ON)

 9.1. Size:946K  bruckewell
 mshm40n085.pdf

MSHM40N085 N-Channel 40-V (D-S) MOSFET Description Graphic Symbol The device is using trench DMOS technology. This advanced technology has been especially tailored to minimize R , provide superior switching performance, DS(ON) and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.

 9.2. Size:1067K  cn hmsemi
 hm40n04k.pdf

HM40N04K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM40N04K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =40V,ID =40A RDS(ON)

 9.3. Size:701K  cn hmsemi
 hm40n06d.pdf

HM40N06D N-Channel Enhancement Mode Power MOSFET Description The HM40N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =40A RDS(ON)

 9.4. Size:534K  cn hmsemi
 hm40n10k.pdf

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)

 9.5. Size:608K  cn hmsemi
 hm40n15ka.pdf

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)

 9.6. Size:949K  cn hmsemi
 hm40n04d.pdf

HM40N04D N-Channel Enhancement Mode Power MOSFET Description The HM40N04D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =40A RDS(ON)

 9.7. Size:608K  cn hmsemi
 hm40n10ka.pdf

HM40N10KA N-Channel Enhancement Mode Power MOSFET Description The HM40N10KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)

 9.8. Size:511K  cn hmsemi
 hm40n15k.pdf

HM40N15K N-Channel Enhancement Mode Power MOSFET Description The HM40N15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)

 9.9. Size:798K  cn hmsemi
 hm40n10.pdf

HM40N10 N-Channel Enhancement Mode Power MOSFET Description The HM40N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)