HM40N20 Datasheet and Replacement
Type Designator: HM40N20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 220 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 290 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
Package: TO220
HM40N20 substitution
HM40N20 Datasheet (PDF)
hm40n20.pdf

HM40N20N-Channel Enhancement Mode Power MOSFET Description The HM40N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =40A RDS(ON)
hm40n20d.pdf

HM40N20DN-Channel Enhancement Mode Power MOSFET Description The HM40N20D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =40A RDS(ON)
hm40n04k.pdf

HM40N04KN-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM40N04K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =40V,ID =40A RDS(ON)
hm40n06d.pdf

HM40N06DN-Channel Enhancement Mode Power MOSFET Description The HM40N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =40A RDS(ON)
Datasheet: HM40N04D , HM40N04K , HM40N06D , HM40N10 , HM40N10K , HM40N10KA , HM40N15K , HM40N15KA , 7N60 , HM40N20D , HM40P04K , HM40P06K , HM4110 , HM4110T , HM4240 , HM4260 , HM4264 .
History: G16P03S | SFB096N200C3 | AM110N06-08P | NP90N04VLG | RJK0223DNS | 2SJ485 | 2P7172A-5
Keywords - HM40N20 MOSFET datasheet
HM40N20 cross reference
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History: G16P03S | SFB096N200C3 | AM110N06-08P | NP90N04VLG | RJK0223DNS | 2SJ485 | 2P7172A-5



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