All MOSFET. HM40N20 Datasheet

 

HM40N20 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM40N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 220 W
   Maximum Drain-Source Voltage |Vds|: 200 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 40 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 163 nC
   Rise Time (tr): 24 nS
   Drain-Source Capacitance (Cd): 290 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.041 Ohm
   Package: TO220

 HM40N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM40N20 Datasheet (PDF)

 ..1. Size:512K  cn hmsemi
hm40n20.pdf

HM40N20
HM40N20

HM40N20N-Channel Enhancement Mode Power MOSFET Description The HM40N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =40A RDS(ON)

 0.1. Size:599K  cn hmsemi
hm40n20d.pdf

HM40N20
HM40N20

HM40N20DN-Channel Enhancement Mode Power MOSFET Description The HM40N20D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =40A RDS(ON)

 9.1. Size:534K  cn hmsemi
hm40n10k.pdf

HM40N20
HM40N20

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)

 9.2. Size:701K  cn hmsemi
hm40n06d.pdf

HM40N20
HM40N20

HM40N06DN-Channel Enhancement Mode Power MOSFET Description The HM40N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =40A RDS(ON)

 9.3. Size:798K  cn hmsemi
hm40n10.pdf

HM40N20
HM40N20

HM40N10 N-Channel Enhancement Mode Power MOSFET Description The HM40N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)

 9.4. Size:1067K  cn hmsemi
hm40n04k.pdf

HM40N20
HM40N20

HM40N04KN-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM40N04K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =40V,ID =40A RDS(ON)

 9.5. Size:511K  cn hmsemi
hm40n15k.pdf

HM40N20
HM40N20

HM40N15K N-Channel Enhancement Mode Power MOSFET Description The HM40N15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)

 9.6. Size:608K  cn hmsemi
hm40n15ka.pdf

HM40N20
HM40N20

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)

 9.7. Size:949K  cn hmsemi
hm40n04d.pdf

HM40N20
HM40N20

HM40N04DN-Channel Enhancement Mode Power MOSFET Description The HM40N04D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =40A RDS(ON)

 9.8. Size:608K  cn hmsemi
hm40n10ka.pdf

HM40N20
HM40N20

HM40N10KAN-Channel Enhancement Mode Power MOSFET Description The HM40N10KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 18N50 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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