HM4260 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HM4260  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 19 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 237 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0115 Ohm

Encapsulados: SOP8

  📄📄 Copiar 

 Búsqueda de reemplazo de HM4260 MOSFET

- Selecciónⓘ de transistores por parámetros

 

HM4260 datasheet

 ..1. Size:840K  cn hmsemi
 hm4260.pdf pdf_icon

HM4260

HM4260 N-Channel Enhancement Mode Power MOSFET Description The HM4260 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =19A Schematic diagram RDS(ON)

 9.1. Size:131K  chenmko
 chm4269jgp.pdf pdf_icon

HM4260

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT CHM4269JGP Dual Enhancement Mode Field Effect Transistor N-channel VOLTAGE 40 Volts CURRENT 6.1 Ampere P-channel VOLTAGE 40 Volts CURRENT 5.2 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low

 9.2. Size:119K  chenmko
 chm4269pa4gp.pdf pdf_icon

HM4260

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT CHM4269PA4GP Dual Enhancement Mode Field Effect Transistor N-channel VOLTAGE 40 Volts CURRENT 14 Ampere P-channel VOLTAGE 40 Volts CURRENT 12 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. TO-252-4 FEATURE * Small flat package. (TO-252-4) .280 (7.10) .094 (2.40) * Super high dense c

 9.3. Size:689K  cn hmsemi
 hm4264b.pdf pdf_icon

HM4260

HM4264B N-Channel Enhancement Mode Power MOSFET Description The HM4264B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 50V,ID =1 A RDS(ON)

MOSTRAR MÁS

Otros transistores... HM40N15KA, HM40N20, HM40N20D, HM40P04K, HM40P06K, HM4110, HM4110T, HM4240, 2N60, HM4264, HM4264B, HM4302, HM4302B, 2SK68A, CRJF390N65GC, HCA60R150T, MDP10N027TH