HM4260 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: HM4260
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 3 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 19 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 50 nC
trⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 237 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0115 Ohm
Тип корпуса: SOP8
HM4260 Datasheet (PDF)
hm4260.pdf
HM4260N-Channel Enhancement Mode Power MOSFET Description The HM4260 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =19A Schematic diagram RDS(ON)
chm4269jgp.pdf
CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNT CHM4269JGPDual Enhancement Mode Field Effect TransistorN-channel: VOLTAGE 40 Volts CURRENT 6.1 AmpereP-channel: VOLTAGE 40 Volts CURRENT 5.2 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low
chm4269pa4gp.pdf
CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNT CHM4269PA4GPDual Enhancement Mode Field Effect TransistorN-channel: VOLTAGE 40 Volts CURRENT 14 AmpereP-channel: VOLTAGE 40 Volts CURRENT 12 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.TO-252-4FEATURE* Small flat package. (TO-252-4).280 (7.10).094 (2.40)* Super high dense c
hm4264b.pdf
HM4264BN-Channel Enhancement Mode Power MOSFET Description The HM4264B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 50V,ID =1 A RDS(ON)
hm4264.pdf
HM4264 N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =12A RDS(ON)
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: QM1830M3 | SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD