All MOSFET. HM4260 Datasheet

 

HM4260 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM4260
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 19 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 50 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 237 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
   Package: SOP8

 HM4260 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM4260 Datasheet (PDF)

 ..1. Size:840K  cn hmsemi
 hm4260.pdf

HM4260 HM4260

HM4260N-Channel Enhancement Mode Power MOSFET Description The HM4260 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =19A Schematic diagram RDS(ON)

 9.1. Size:131K  chenmko
 chm4269jgp.pdf

HM4260 HM4260

CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNT CHM4269JGPDual Enhancement Mode Field Effect TransistorN-channel: VOLTAGE 40 Volts CURRENT 6.1 AmpereP-channel: VOLTAGE 40 Volts CURRENT 5.2 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low

 9.2. Size:119K  chenmko
 chm4269pa4gp.pdf

HM4260 HM4260

CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNT CHM4269PA4GPDual Enhancement Mode Field Effect TransistorN-channel: VOLTAGE 40 Volts CURRENT 14 AmpereP-channel: VOLTAGE 40 Volts CURRENT 12 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.TO-252-4FEATURE* Small flat package. (TO-252-4).280 (7.10).094 (2.40)* Super high dense c

 9.3. Size:689K  cn hmsemi
 hm4264b.pdf

HM4260 HM4260

HM4264BN-Channel Enhancement Mode Power MOSFET Description The HM4264B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 50V,ID =1 A RDS(ON)

 9.4. Size:524K  cn hmsemi
 hm4264.pdf

HM4260 HM4260

HM4264 N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =12A RDS(ON)

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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