All MOSFET. HM4260 Datasheet

 

HM4260 MOSFET. Datasheet pdf. Equivalent

Type Designator: HM4260

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 3 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 19 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 50 nC

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 237 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0115 Ohm

Package: SOP8

HM4260 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM4260 Datasheet (PDF)

..1. hm4260.pdf Size:840K _cn_hmsemi

HM4260 HM4260

HM4260N-Channel Enhancement Mode Power MOSFET Description The HM4260 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =19A Schematic diagram RDS(ON)

9.1. chm4269jgp.pdf Size:131K _chenmko

HM4260 HM4260

CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNT CHM4269JGPDual Enhancement Mode Field Effect TransistorN-channel: VOLTAGE 40 Volts CURRENT 6.1 AmpereP-channel: VOLTAGE 40 Volts CURRENT 5.2 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low

9.2. chm4269pa4gp.pdf Size:119K _chenmko

HM4260 HM4260

CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNT CHM4269PA4GPDual Enhancement Mode Field Effect TransistorN-channel: VOLTAGE 40 Volts CURRENT 14 AmpereP-channel: VOLTAGE 40 Volts CURRENT 12 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.TO-252-4FEATURE* Small flat package. (TO-252-4).280 (7.10).094 (2.40)* Super high dense c

 9.3. hm4264.pdf Size:524K _cn_hmsemi

HM4260 HM4260

HM4264 N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =12A RDS(ON)

9.4. hm4264b.pdf Size:689K _cn_hmsemi

HM4260 HM4260

HM4264BN-Channel Enhancement Mode Power MOSFET Description The HM4264B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 50V,ID =1 A RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF1405 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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