FDMC3612 Datasheet. Equivalente

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 fdmc3612.pdf

FDMC3612 General Description N-Channel Power Trench MOSFET This N-Channel MOSFET is produced using ON Semiconductor s advanced Power Trench process that has 100 V, 12 A, 110 m been especially tailored to minimize the on-state resistance and Features yet maintain superior switching performance. Max rDS(on) = 110 m at VGS = 10 V, ID = 3.3 A Max rDS(on) = 122 m at VGS =

 ..2. Size:346K  fairchild semi
 fdmc3612.pdf

August 2010 FDMC3612 N-Channel Power Trench MOSFET 100 V, 12 A, 110 m Features General Description Max rDS(on) = 110 m at VGS = 10 V, ID = 3.3 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 122 m at VGS = 6 V, ID = 3.0 A been especially tailored to minimize the on-state resistance and Low Profi

 ..3. Size:253K  onsemi
 fdmc3612.pdf

FDMC3612 General Description N-Channel Power Trench MOSFET This N-Channel MOSFET is produced using ON Semiconductor s advanced Power Trench process that has 100 V, 12 A, 110 m been especially tailored to minimize the on-state resistance and Features yet maintain superior switching performance. Max rDS(on) = 110 m at VGS = 10 V, ID = 3.3 A Max rDS(on) = 122 m at VGS =

 ..4. Size:2394K  kexin
 fdmc3612.pdf

SMD Type MOSFET N-Channel MOSFET FDMC3612 (KDMC3612) DFN 3X3 Features Top VDS (V) = 100V 8 7 6 5 ID = 12A RDS(ON) 110m (VGS = 10V) RDS(ON) 122m (VGS = 6V) Low Profile - 1 mm max in Power 33 Bottom D D D D 1 2 3 4 D 5 4 G D 6 3 S D 7 2 S D 8 1 S G S S S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Sour

 9.1. Size:446K  fairchild semi
 fdmc3020dc.pdf

October 2010 FDMC3020DC N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 6.25 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 6.25 m at VGS = 10 V, ID = 12 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 9.0 m a