All MOSFET. FDMC3612 Datasheet

 

FDMC3612 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDMC3612
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.9 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: POWER33

 FDMC3612 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDMC3612 Datasheet (PDF)

 ..1. Size:253K  1
 fdmc3612.pdf

FDMC3612 FDMC3612

FDMC3612General DescriptionN-Channel Power Trench MOSFETThis N-Channel MOSFET is produced using ON Semiconductors advanced Power Trench process that has 100 V, 12 A, 110 mbeen especially tailored to minimize the on-state resistance and Featuresyet maintain superior switching performance. Max rDS(on) = 110 m at VGS = 10 V, ID = 3.3 A Max rDS(on) = 122 m at VGS =

 ..2. Size:346K  fairchild semi
 fdmc3612.pdf

FDMC3612 FDMC3612

August 2010FDMC3612N-Channel Power Trench MOSFET 100 V, 12 A, 110 mFeatures General Description Max rDS(on) = 110 m at VGS = 10 V, ID = 3.3 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 122 m at VGS = 6 V, ID = 3.0 Abeen especially tailored to minimize the on-state resistance and Low Profi

 ..3. Size:253K  onsemi
 fdmc3612.pdf

FDMC3612 FDMC3612

FDMC3612General DescriptionN-Channel Power Trench MOSFETThis N-Channel MOSFET is produced using ON Semiconductors advanced Power Trench process that has 100 V, 12 A, 110 mbeen especially tailored to minimize the on-state resistance and Featuresyet maintain superior switching performance. Max rDS(on) = 110 m at VGS = 10 V, ID = 3.3 A Max rDS(on) = 122 m at VGS =

 ..4. Size:2394K  kexin
 fdmc3612.pdf

FDMC3612 FDMC3612

SMD Type MOSFETN-Channel MOSFETFDMC3612 (KDMC3612)DFN 3X3 FeaturesTop VDS (V) = 100V8 7 6 5 ID = 12A RDS(ON) 110m (VGS = 10V) RDS(ON) 122m (VGS = 6V) Low Profile - 1 mm max in Power 33BottomD D DD1 2 3 4D 5 4 GD 6 3 SD 7 2 SD 8 1 SG S S S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Sour

 9.1. Size:446K  fairchild semi
 fdmc3020dc.pdf

FDMC3612 FDMC3612

October 2010FDMC3020DCN-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 6.25 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 6.25 m at VGS = 10 V, ID = 12 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 9.0 m a

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top