FDMC3612 datasheet, аналоги, основные параметры
Наименование производителя: FDMC3612 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 35 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 16 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.11 Ohm
Тип корпуса: POWER33
📄📄 Копировать ⓘ
Аналог (замена) для FDMC3612
- подборⓘ MOSFET транзистора по параметрам
FDMC3612 даташит
fdmc3612.pdf
FDMC3612 General Description N-Channel Power Trench MOSFET This N-Channel MOSFET is produced using ON Semiconductor s advanced Power Trench process that has 100 V, 12 A, 110 m been especially tailored to minimize the on-state resistance and Features yet maintain superior switching performance. Max rDS(on) = 110 m at VGS = 10 V, ID = 3.3 A Max rDS(on) = 122 m at VGS =
fdmc3612.pdf
August 2010 FDMC3612 N-Channel Power Trench MOSFET 100 V, 12 A, 110 m Features General Description Max rDS(on) = 110 m at VGS = 10 V, ID = 3.3 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 122 m at VGS = 6 V, ID = 3.0 A been especially tailored to minimize the on-state resistance and Low Profi
fdmc3612.pdf
FDMC3612 General Description N-Channel Power Trench MOSFET This N-Channel MOSFET is produced using ON Semiconductor s advanced Power Trench process that has 100 V, 12 A, 110 m been especially tailored to minimize the on-state resistance and Features yet maintain superior switching performance. Max rDS(on) = 110 m at VGS = 10 V, ID = 3.3 A Max rDS(on) = 122 m at VGS =
fdmc3612.pdf
SMD Type MOSFET N-Channel MOSFET FDMC3612 (KDMC3612) DFN 3X3 Features Top VDS (V) = 100V 8 7 6 5 ID = 12A RDS(ON) 110m (VGS = 10V) RDS(ON) 122m (VGS = 6V) Low Profile - 1 mm max in Power 33 Bottom D D D D 1 2 3 4 D 5 4 G D 6 3 S D 7 2 S D 8 1 S G S S S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Sour
Другие IGBT... FDMC2512SDC, FDMC2514SDC, FDMC2523P, FDMC2610, STS2620, FDMC2674, FDMC3020DC, STS2601, 18N50, STS2309A, FDMC4435BZ, FDMC510P, FDMC5614P, FDMC6296, STS2308A, FDMC6675BZ, FDMC6679AZ
🌐 : EN ES РУ
Список транзисторов
Обновления
MOSFET: ASDM30P100KQ | ASDM30N90Q | ASDM30N75KQ | ASDM30N150Q | ASDM30N120Q | ASDM30N120KQ | ASDM30N100KQ | ASDM30DN40E | ASDM30DN30E | ASDM3050KQ | ASDM2305 | ASDM2301 | ASDM2300ZA | ASDM20P13S | ASDM20N90Q | ASDM20N60
Popular searches
2sc1815 equivalent | 2sa1220 | 2sa940 | 2sc627 | 2sc680 | 2sd234 | 2sc9014 | a970 transistor





