FDMC3612General DescriptionN-Channel Power Trench MOSFETThis N-Channel MOSFET is produced using ON Semiconductors advanced Power Trench process that has 100 V, 12 A, 110 mbeen especially tailored to minimize the on-state resistance and Featuresyet maintain superior switching performance. Max rDS(on) = 110 m at VGS = 10 V, ID = 3.3 A Max rDS(on) = 122 m at VGS =

August 2010FDMC3612N-Channel Power Trench MOSFET 100 V, 12 A, 110 mFeatures General Description Max rDS(on) = 110 m at VGS = 10 V, ID = 3.3 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 122 m at VGS = 6 V, ID = 3.0 Abeen especially tailored to minimize the on-state resistance and Low Profi

FDMC3612General DescriptionN-Channel Power Trench MOSFETThis N-Channel MOSFET is produced using ON Semiconductors advanced Power Trench process that has 100 V, 12 A, 110 mbeen especially tailored to minimize the on-state resistance and Featuresyet maintain superior switching performance. Max rDS(on) = 110 m at VGS = 10 V, ID = 3.3 A Max rDS(on) = 122 m at VGS =

SMD Type MOSFETN-Channel MOSFETFDMC3612 (KDMC3612)DFN 3X3 FeaturesTop VDS (V) = 100V8 7 6 5 ID = 12A RDS(ON) 110m (VGS = 10V) RDS(ON) 122m (VGS = 6V) Low Profile - 1 mm max in Power 33BottomD D DD1 2 3 4D 5 4 GD 6 3 SD 7 2 SD 8 1 SG S S S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Sour

October 2010FDMC3020DCN-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 6.25 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 6.25 m at VGS = 10 V, ID = 12 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 9.0 m a