CS25N50AKR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CS25N50AKR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 300 W
Voltaje máximo drenador - fuente |Vds|: 500 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 25 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 64 nC
Tiempo de subida (tr): 64.4 nS
Conductancia de drenaje-sustrato (Cd): 214 pF
Resistencia entre drenaje y fuente RDS(on): 0.27 Ohm
Paquete / Cubierta: TO247
Búsqueda de reemplazo de MOSFET CS25N50AKR
CS25N50AKR Datasheet (PDF)
cs25n50akr.pdf
Silicon N-Channel Power MOSFET R CS25N50 AKR General Description VDSS 500 V CS25N50 AKR the silicon N-channel Enhanced ID 25 A PD(TC=25) 300 W VDMOSFET, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.21 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
cs25n06 b3.pdf
Silicon N-Channel Power MOSFET R CS25N06 B3 General Description VDSS 60 V CS25N06 B3, the silicon N-channel Enhanced ID 25 A PD(TC=25) 50 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 28 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
cs25n06 b8.pdf
Silicon N-Channel Power MOSFET R CS25N06 B8 General Description VDSS 60 V CS25N06 B8, the silicon N-channel Enhanced ID 25 A PD(TC=25) 50 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 28 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
cs25n06 b4.pdf
Silicon N-Channel Power MOSFET R CS25N06 B4 General Description VDSS 60 V CS25N06 B4, the silicon N-channel Enhanced VDMOSFETs, ID 25 A PD(TC=25) 50 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 28 m the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou power s
cs25n06c4.pdf
Silicon N-Channel Power MOSFET R CS25N06 C4 General Description CS25N06 C4 the silicon N-channel Enhanced VDSS 60 V VDMOSFETs, is obtained by the high density Trench ID 25 A technology which reduce the conduction loss, improve switching PD 36.2 W RDS(ON)Typ 23 m performance and enhance the avalanche energy. This device is suitable for use as a load switch and P
cs25n06b4.pdf
Silicon N-Channel Power MOSFET R CS25N06 B4 General Description VDSS 60 V CS25N06 B4, the silicon N-channel Enhanced VDMOSFETs, ID 25 A PD(TC=25) 50 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 28 m the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou power s
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