Справочник MOSFET. CS25N50AKR

 

CS25N50AKR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: CS25N50AKR
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 25 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 64.4 ns
   Cossⓘ - Выходная емкость: 214 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.27 Ohm
   Тип корпуса: TO247

 Аналог (замена) для CS25N50AKR

 

 

CS25N50AKR Datasheet (PDF)

 ..1. Size:387K  1
 cs25n50akr.pdf

CS25N50AKR CS25N50AKR

Silicon N-Channel Power MOSFET R CS25N50 AKR General Description VDSS 500 V CS25N50 AKR the silicon N-channel Enhanced ID 25 A PD(TC=25) 300 W VDMOSFET, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.21 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 9.1. Size:2434K  blue-rocket-elect
 brcs25n60ph.pdf

CS25N50AKR CS25N50AKR

BRCS25N60PH Rev.A Mar.-2020 DATA SHEET / Descriptions N TO-3PH N-Channel MOSFET in a TO-3PH Plastic Package. / Features Crss (85pF)dv/dt Low gate charge, Low Crss (typical 85pF ), Fast switching, 100% avalanche tested,Improved dv/dt

 9.2. Size:708K  crhj
 cs25n06 b3.pdf

CS25N50AKR CS25N50AKR

Silicon N-Channel Power MOSFET R CS25N06 B3 General Description VDSS 60 V CS25N06 B3, the silicon N-channel Enhanced ID 25 A PD(TC=25) 50 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 28 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 9.3. Size:696K  crhj
 cs25n06 b8.pdf

CS25N50AKR CS25N50AKR

Silicon N-Channel Power MOSFET R CS25N06 B8 General Description VDSS 60 V CS25N06 B8, the silicon N-channel Enhanced ID 25 A PD(TC=25) 50 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 28 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 9.4. Size:697K  crhj
 cs25n06 b4.pdf

CS25N50AKR CS25N50AKR

Silicon N-Channel Power MOSFET R CS25N06 B4 General Description VDSS 60 V CS25N06 B4, the silicon N-channel Enhanced VDMOSFETs, ID 25 A PD(TC=25) 50 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 28 m the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou power s

 9.5. Size:748K  wuxi china
 cs25n06c4.pdf

CS25N50AKR CS25N50AKR

Silicon N-Channel Power MOSFET R CS25N06 C4 General Description CS25N06 C4 the silicon N-channel Enhanced VDSS 60 V VDMOSFETs, is obtained by the high density Trench ID 25 A technology which reduce the conduction loss, improve switching PD 36.2 W RDS(ON)Typ 23 m performance and enhance the avalanche energy. This device is suitable for use as a load switch and P

 9.6. Size:697K  wuxi china
 cs25n06b4.pdf

CS25N50AKR CS25N50AKR

Silicon N-Channel Power MOSFET R CS25N06 B4 General Description VDSS 60 V CS25N06 B4, the silicon N-channel Enhanced VDMOSFETs, ID 25 A PD(TC=25) 50 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 28 m the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou power s

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