CS25N50AKR MOSFET Datasheet: N-Ch, 500V, 25A. Full specification with pinout and replacement list

CS25N50AKR Specs and Replacement

   Type Designator: CS25N50AKR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 64.4 nS
   Cossⓘ - Output Capacitance: 214 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
   Package: TO247

CS25N50AKR substitution

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CS25N50AKR datasheet

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cs25n50akr.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS25N50 AKR General Description VDSS 500 V CS25N50 AKR the silicon N-channel Enhanced ID 25 A PD(TC=25 ) 300 W VDMOSFET, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.21 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po... See More ⇒

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brcs25n60ph.pdf pdf_icon

BRCS25N60PH Rev.A Mar.-2020 DATA SHEET / Descriptions N TO-3PH N-Channel MOSFET in a TO-3PH Plastic Package. / Features Crss ( 85pF) dv/dt Low gate charge, Low Crss (typical 85pF ), Fast switching, 100% avalanche tested,Improved dv/dt ... See More ⇒

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cs25n06 b3.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS25N06 B3 General Description VDSS 60 V CS25N06 B3, the silicon N-channel Enhanced ID 25 A PD(TC=25 ) 50 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 28 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒

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cs25n06 b8.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS25N06 B8 General Description VDSS 60 V CS25N06 B8, the silicon N-channel Enhanced ID 25 A PD(TC=25 ) 50 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 28 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒