HYG042N10NS1P Todos los transistores

 

HYG042N10NS1P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HYG042N10NS1P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 200 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 160 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 97 nS

Cossⓘ - Capacitancia de salida: 2506 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0042 Ohm

Encapsulados: TO220

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HYG042N10NS1P datasheet

 ..1. Size:863K  1
hyg042n10ns1p hyg042n10ns1b.pdf pdf_icon

HYG042N10NS1P

HYG042N10NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 100V/160A RDS(ON)=3.5m (typ.) @ VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Power Switching application DC-DC Converters N-Channel MOSFET Ordering and Marking Information

 9.1. Size:1340K  1
hyg045n03la1c1.pdf pdf_icon

HYG042N10NS1P

HYG045N03LA1C1 N-Channel Enhancement Mode MOSFET Feature Pin Description 30V/50A RDS(ON)=3.9 m (typ.) @VGS = 10V RDS(ON)=5.2 m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices Available Pin1 (RoHS Compliant) Applications Switching Application Battery Protection Single N-Channel MOSFET Ordering and Marking Info

 9.2. Size:1346K  1
hyg045n03la1c2.pdf pdf_icon

HYG042N10NS1P

HYG045N03LA1C2 Single N-Channel Enhancement Mode MOSFET Feature Pin Description 30V/78A D D D D D D D D RDS(ON)= 3.6 m (typ.) @VGS = 10V RDS(ON)= 4.8 m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G PDFN8L(5x6) Applications Load Switch Lithium battery protect board Single N-Channel MOSFET O

 9.3. Size:1404K  1
hyg043n10ns2p hyg043n10ns2b.pdf pdf_icon

HYG042N10NS1P

Microelectronics HYG043N10NS2P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 100V/164A RDS(ON)= 3.5 m (typ.) @VGS = 10V 100% Avalanche Tested 100% DVDS G D S Reliable and Rugged D S G Halogen Free and Green Devices Available TO-220FB-3L TO-263-2L (RoHS Compliant) Applications Battery Management System Controller Sin

Otros transistores... NVHL055N60S5F , OSG60R074HZF , OSG60R074FZF , SRC60R078BTF , SRC60R078BT , SRC60R078BS2 , STK0825F , CS25N50AKR , EMB04N03H , HYG042N10NS1B , SUP75N06-08 , SUB75N06-08 , HM4354 , HM4402A , HM4402B , HM4402C , HM4402E .

History: AOY528 | AOWF10N60 | SWD4N50K | 4N60L-TN3-R | RUF020N02 | SWD80N04V | HM4354

 

 

 

 

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