All MOSFET. HYG042N10NS1P Datasheet

 

HYG042N10NS1P Datasheet and Replacement


   Type Designator: HYG042N10NS1P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 160 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 97 nS
   Cossⓘ - Output Capacitance: 2506 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: TO220
 

 HYG042N10NS1P substitution

   - MOSFET ⓘ Cross-Reference Search

 

HYG042N10NS1P Datasheet (PDF)

 ..1. Size:863K  1
 hyg042n10ns1p hyg042n10ns1b.pdf pdf_icon

HYG042N10NS1P

HYG042N10NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 100V/160A RDS(ON)=3.5m(typ.) @ VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Power Switching application DC-DC Converters N-Channel MOSFET Ordering and Marking Information

 9.1. Size:1340K  1
 hyg045n03la1c1.pdf pdf_icon

HYG042N10NS1P

HYG045N03LA1C1N-Channel Enhancement Mode MOSFETFeature Pin Description 30V/50ARDS(ON)=3.9 m (typ.) @VGS = 10VRDS(ON)=5.2 m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices AvailablePin1(RoHS Compliant)Applications Switching Application Battery ProtectionSingle N-Channel MOSFETOrdering and Marking Info

 9.2. Size:1346K  1
 hyg045n03la1c2.pdf pdf_icon

HYG042N10NS1P

HYG045N03LA1C2Single N-Channel Enhancement Mode MOSFETFeature Pin Description 30V/78AD D D DD D D DRDS(ON)= 3.6 m(typ.) @VGS = 10VRDS(ON)= 4.8 m(typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableG S S SS S S GPDFN8L(5x6)Applications Load Switch Lithium battery protect boardSingle N-Channel MOSFETO

 9.3. Size:1346K  hymexa
 hyg045n03la1c2.pdf pdf_icon

HYG042N10NS1P

HYG045N03LA1C2Single N-Channel Enhancement Mode MOSFETFeature Pin Description 30V/78AD D D DD D D DRDS(ON)= 3.6 m(typ.) @VGS = 10VRDS(ON)= 4.8 m(typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableG S S SS S S GPDFN8L(5x6)Applications Load Switch Lithium battery protect boardSingle N-Channel MOSFETO

SHOW MORE

Datasheet: NVHL055N60S5F , OSG60R074HZF , OSG60R074FZF , SRC60R078BTF , SRC60R078BT , SRC60R078BS2 , STK0825F , CS25N50AKR , 2SK3918 , HYG042N10NS1B , SUP75N06-08 , SUB75N06-08 , HM4354 , HM4402A , HM4402B , HM4402C , HM4402E .

Keywords - HYG042N10NS1P MOSFET datasheet

 HYG042N10NS1P cross reference
 HYG042N10NS1P equivalent finder
 HYG042N10NS1P lookup
 HYG042N10NS1P substitution
 HYG042N10NS1P replacement

 

 
Back to Top

 


 
.