HM45P02Q Todos los transistores

 

HM45P02Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HM45P02Q
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 80 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 45 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 42 nS
   Cossⓘ - Capacitancia de salida: 577 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
   Paquete / Cubierta: DFN3.3X3.3EP
 

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HM45P02Q Datasheet (PDF)

 ..1. Size:548K  cn hmsemi
 hm45p02q.pdf pdf_icon

HM45P02Q

HM45P02QP-Channel Enhancement Mode Power MOSFET Description The HM45P02Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-20V,ID =-45A Schematic diagram RDS(ON)

 7.1. Size:731K  cn hmsemi
 hm45p02d.pdf pdf_icon

HM45P02Q

HM45P02DP-Channel Enhancement Mode Power MOSFET Description The HM45P02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-20V,ID =-45A RDS(ON)

 8.1. Size:1038K  cn hmsemi
 hm45p03k.pdf pdf_icon

HM45P02Q

HM45P03KP-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM45P03K uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SSchematic diagram GENERAL FEATURES V = -30V,ID = -45A D SRDS(ON)

Otros transistores... HM4487B , HM4488 , HM4490 , HM4503 , HM45N02D , HM45N02Q , HM45N06D , HM45P02D , IRLZ44N , HM45P03K , HM4606 , HM4606A , HM4606B , HM4606C , HM4606D , HM4611 , HM4611A .

History: TK40P04M1 | IRF2807ZLPBF | BUK7Y65-100E

 

 
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