All MOSFET. HM45P02Q Datasheet

 

HM45P02Q MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM45P02Q
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 45 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 55 nC
   trⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 577 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: DFN3.3X3.3EP

 HM45P02Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM45P02Q Datasheet (PDF)

 ..1. Size:548K  cn hmsemi
 hm45p02q.pdf

HM45P02Q HM45P02Q

HM45P02QP-Channel Enhancement Mode Power MOSFET Description The HM45P02Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-20V,ID =-45A Schematic diagram RDS(ON)

 7.1. Size:731K  cn hmsemi
 hm45p02d.pdf

HM45P02Q HM45P02Q

HM45P02DP-Channel Enhancement Mode Power MOSFET Description The HM45P02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-20V,ID =-45A RDS(ON)

 8.1. Size:1038K  cn hmsemi
 hm45p03k.pdf

HM45P02Q HM45P02Q

HM45P03KP-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM45P03K uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SSchematic diagram GENERAL FEATURES V = -30V,ID = -45A D SRDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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