HM4606 Todos los transistores

 

HM4606 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HM4606

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2.5 nS

Cossⓘ - Capacitancia de salida: 45 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.031 Ohm

Encapsulados: SOP8

 Búsqueda de reemplazo de HM4606 MOSFET

- Selecciónⓘ de transistores por parámetros

 

HM4606 datasheet

 ..1. Size:1544K  cn hmsemi
hm4606.pdf pdf_icon

HM4606

HM4606 N and P-Channel Enhancement Mode Power MOSFET Description The HM4606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications. General Features N-channel P-channel N-Channel VDS = 30V,ID =7.0A Schematic diagram RDS(ON)

 0.1. Size:1907K  cn hmsemi
hm4606c.pdf pdf_icon

HM4606

HM4606C N and P-Channel Enhancement Mode Power MOSFET Description The HM4606C uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications. General Features N-channel P-channel N-Channel VDS = 20V,ID =5.0A Schematic diagram RDS(ON)

 0.2. Size:679K  cn hmsemi
hm4606d.pdf pdf_icon

HM4606

HM4606D N and P-Channel Enhancement Mode Power MOSFET Description The HM4606D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications. General Features N-channel P-channel N-Channel VDS = 30V,ID =6.5A Schematic diagram RDS(ON)

 0.3. Size:922K  cn hmsemi
hm4606b.pdf pdf_icon

HM4606

HM4606B N and P-Channel Enhancement Mode Power MOSFET Description The HM4606B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS = 30V,ID =6.5A Schematic diagram RDS(ON)

Otros transistores... HM4490 , HM4503 , HM45N02D , HM45N02Q , HM45N06D , HM45P02D , HM45P02Q , HM45P03K , CS150N03A8 , HM4606A , HM4606B , HM4606C , HM4606D , HM4611 , HM4611A , HM4611B , HM4612 .

 

 

 


🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10

 

 

 

Popular searches

2sa970 | a970 | d2390 transistor | 2n5087 equivalent | tip147 datasheet | 2n4124 | mj15022 | toshiba c5198

 

 

↑ Back to Top
.