HM4606 MOSFET Datasheet: NP-Ch, 30V, 7A. Full specification with pinout and replacement list

HM4606 Specs and Replacement

Type Designator: HM4606

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.5 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm

Package: SOP8

HM4606 substitution

- MOSFET ⓘ Cross-Reference Search

HM4606 datasheet

..1. Size:1544K cn hmsemi
hm4606.pdf pdf_icon

HM4606 N and P-Channel Enhancement Mode Power MOSFET Description The HM4606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications. General Features N-channel P-channel N-Channel VDS = 30V,ID =7.0A Schematic diagram RDS(ON) ... See More ⇒

0.1. Size:1907K cn hmsemi
hm4606c.pdf pdf_icon

HM4606C N and P-Channel Enhancement Mode Power MOSFET Description The HM4606C uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications. General Features N-channel P-channel N-Channel VDS = 20V,ID =5.0A Schematic diagram RDS(ON) ... See More ⇒

0.2. Size:679K cn hmsemi
hm4606d.pdf pdf_icon

HM4606D N and P-Channel Enhancement Mode Power MOSFET Description The HM4606D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications. General Features N-channel P-channel N-Channel VDS = 30V,ID =6.5A Schematic diagram RDS(ON) ... See More ⇒

0.3. Size:922K cn hmsemi
hm4606b.pdf pdf_icon

HM4606B N and P-Channel Enhancement Mode Power MOSFET Description The HM4606B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS = 30V,ID =6.5A Schematic diagram RDS(ON) ... See More ⇒