Справочник MOSFET. HM4606

 

HM4606 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: HM4606
   Тип транзистора: MOSFET
   Полярность: NP
   Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 2.5 ns
   Cossⓘ - Выходная емкость: 45 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.031 Ohm
   Тип корпуса: SOP8
 

 Аналог (замена) для HM4606

   - подбор ⓘ MOSFET транзистора по параметрам

 

HM4606 Datasheet (PDF)

 ..1. Size:1544K  cn hmsemi
 hm4606.pdf pdf_icon

HM4606

HM4606N and P-Channel Enhancement Mode Power MOSFET Description The HM4606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications.General Features N-channel P-channel N-Channel VDS = 30V,ID =7.0A Schematic diagram RDS(ON)

 0.1. Size:1907K  cn hmsemi
 hm4606c.pdf pdf_icon

HM4606

HM4606CN and P-Channel Enhancement Mode Power MOSFET Description The HM4606C uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications.General Features N-channel P-channel N-Channel VDS = 20V,ID =5.0A Schematic diagram RDS(ON)

 0.2. Size:679K  cn hmsemi
 hm4606d.pdf pdf_icon

HM4606

HM4606DN and P-Channel Enhancement Mode Power MOSFET Description The HM4606D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications.General Features N-channel P-channel N-Channel VDS = 30V,ID =6.5A Schematic diagram RDS(ON)

 0.3. Size:922K  cn hmsemi
 hm4606b.pdf pdf_icon

HM4606

HM4606BN and P-Channel Enhancement Mode Power MOSFET Description The HM4606B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS = 30V,ID =6.5A Schematic diagram RDS(ON)

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... HM4490 , HM4503 , HM45N02D , HM45N02Q , HM45N06D , HM45P02D , HM45P02Q , HM45P03K , IRLB4132 , HM4606A , HM4606B , HM4606C , HM4606D , HM4611 , HM4611A , HM4611B , HM4612 .

History: FTK2627 | BSC090N03MSG | AO6402 | BSC016N03LSG | FXN9N50F | HM24N50A | BUK9E6R1-100E

 

 
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