HM4620D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM4620D
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.8 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.2 nS
Cossⓘ - Capacitancia de salida: 48 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm
Paquete / Cubierta: DFN2X2-6L
Búsqueda de reemplazo de HM4620D MOSFET
HM4620D Datasheet (PDF)
hm4620d.pdf

HM N and P-Channel Enhancement Mode Power MOSFET Description The HM uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel VDS = 20V,ID = A N-channel P-channelRDS(ON)
hm4622.pdf

HM4622N and P-Channel Enhancement Mode Power MOSFET Description The HM4622 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications.General Features N-channel P-channel N-Channel VDS = 20V,ID =5.0A Schematic diagram RDS(ON)
hm4622a.pdf

HM4622AN and P-Channel Enhancement Mode Power MOSFET Description The HM4622A uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications.General Features N-channel P-channel N-Channel VDS = 20V,ID =7.5A Schematic diagram RDS(ON)
Otros transistores... HM4614 , HM4614B , HM4615 , HM4616 , HM4616A , HM4618 , HM4618B , HM4618SP , IRF530 , HM4622 , HM4622A , HM4630D , HM4803 , HM4805A , HM4805B , HM4806A , HM4806B .
History: HM4803 | SRT03N016L | DCC060M65G2
History: HM4803 | SRT03N016L | DCC060M65G2



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