HM4620D Specs and Replacement
Type Designator: HM4620D
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.2 nS
Cossⓘ - Output Capacitance: 48 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: DFN2X2-6L
HM4620D substitution
- MOSFET ⓘ Cross-Reference Search
HM4620D datasheet
hm4620d.pdf
HM N and P-Channel Enhancement Mode Power MOSFET Description The HM uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel VDS = 20V,ID = A N-channel P-channel RDS(ON) ... See More ⇒
hm4622.pdf
HM4622 N and P-Channel Enhancement Mode Power MOSFET Description The HM4622 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications. General Features N-channel P-channel N-Channel VDS = 20V,ID =5.0A Schematic diagram RDS(ON) ... See More ⇒
Detailed specifications: HM4614, HM4614B, HM4615, HM4616, HM4616A, HM4618, HM4618B, HM4618SP, 20N50, HM4622, HM4622A, HM4630D, HM4803, HM4805A, HM4805B, HM4806A, HM4806B
Keywords - HM4620D MOSFET specs
HM4620D cross reference
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HM4620D substitution
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