HM4620D - Даташиты. Аналоги. Основные параметры
Наименование производителя: HM4620D
Тип транзистора: MOSFET
Полярность: NP
Pd ⓘ - Максимальная рассеиваемая мощность: 0.8 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 5 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 3.2 ns
Cossⓘ - Выходная емкость: 48 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.065 Ohm
Тип корпуса: DFN2X2-6L
Аналог (замена) для HM4620D
HM4620D Datasheet (PDF)
hm4620d.pdf

HM N and P-Channel Enhancement Mode Power MOSFET Description The HM uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel VDS = 20V,ID = A N-channel P-channelRDS(ON)
hm4622.pdf

HM4622N and P-Channel Enhancement Mode Power MOSFET Description The HM4622 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications.General Features N-channel P-channel N-Channel VDS = 20V,ID =5.0A Schematic diagram RDS(ON)
hm4622a.pdf

HM4622AN and P-Channel Enhancement Mode Power MOSFET Description The HM4622A uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications.General Features N-channel P-channel N-Channel VDS = 20V,ID =7.5A Schematic diagram RDS(ON)
Другие MOSFET... HM4614 , HM4614B , HM4615 , HM4616 , HM4616A , HM4618 , HM4618B , HM4618SP , IRF530 , HM4622 , HM4622A , HM4630D , HM4803 , HM4805A , HM4805B , HM4806A , HM4806B .
History: NTMFS4H02N | STW160N75F3 | STP18NM60N | HM4803 | IXFE24N100 | SIS892ADN | ELM14468AA
History: NTMFS4H02N | STW160N75F3 | STP18NM60N | HM4803 | IXFE24N100 | SIS892ADN | ELM14468AA



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