HM4953D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HM4953D
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 11.7 nC
   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 125 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm
   Paquete / Cubierta: SO8 SOT23-6

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HM4953D Datasheet (PDF)

..1. Size:2783K cn hmsemi
hm4953d.pdf

Shenzhen H&M Semiconductor Co.Ltd http//www.hmsemi.com Shenzhen H&M Semiconductor Co.Ltd http//www.hmsemi.com Shenzhen H&M Semiconductor Co.Ltd http//www.hmsemi.com Shenzhen H&M Semiconductor Co.Ltd http//www.hmsemi.com

8.1. Size:83K chenmko
chm4953jgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM4953JGPSURFACE MOUNT Dual P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.9 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High

8.2. Size:625K cn hmsemi
hm4953c.pdf

HM4953C Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4953C uses advanced trench technology to provide D Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G Gload switch or in PWM applications. S SGENERAL FEATURES Schematic diagram VDS = -27V,ID = -5A RDS(ON)

8.3. Size:763K cn hmsemi
hm4953b.pdf

HM4953B Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4953B uses advanced trench technology to provide D Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G Gload switch or in PWM applications. S SGENERAL FEATURES Schematic diagram VDS = -20V,ID = -5A RDS(ON)

8.4. Size:454K cn hmsemi
hm4953.pdf

HM4953Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION D1D2The HM4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S1 S2Schematic diagram GENERAL FEATURES VDS = -30V,ID = -5.1A RDS(ON)

8.5. Size:579K cn hmsemi
hm4953a.pdf

HM4953ADual P-Channel Enhancement Mode Power MOSFET DESCRIPTION D1D2The HM4953A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S1 S2Schematic diagram GENERAL FEATURES VDS = -30V,ID = -5.1A RDS(ON)

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