HM4953D Todos los transistores

 ..1. Size:2783K  cn hmsemi
 hm4953d.pdf

Shenzhen H&M Semiconductor Co.Ltd http //www.hmsemi.com Shenzhen H&M Semiconductor Co.Ltd http //www.hmsemi.com Shenzhen H&M Semiconductor Co.Ltd http //www.hmsemi.com Shenzhen H&M Semiconductor Co.Ltd http //www.hmsemi.com

 8.1. Size:83K  chenmko
 chm4953jgp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM4953JGP SURFACE MOUNT Dual P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.9 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High

 8.2. Size:625K  cn hmsemi
 hm4953c.pdf

HM4953C Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4953C uses advanced trench technology to provide D D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G G load switch or in PWM applications. S S GENERAL FEATURES Schematic diagram VDS = -27V,ID = -5A RDS(ON)

 8.3. Size:763K  cn hmsemi
 hm4953b.pdf

HM4953B Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4953B uses advanced trench technology to provide D D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G G load switch or in PWM applications. S S GENERAL FEATURES Schematic diagram VDS = -20V,ID = -5A RDS(ON)

 8.4. Size:454K  cn hmsemi
 hm4953.pdf

HM4953 Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION D1 D2 The HM4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2 voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S1 S2 Schematic diagram GENERAL FEATURES VDS = -30V,ID = -5.1A RDS(ON)

 8.5. Size:579K  cn hmsemi
 hm4953a.pdf

HM4953A Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION D1 D2 The HM4953A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2 voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S1 S2 Schematic diagram GENERAL FEATURES VDS = -30V,ID = -5.1A RDS(ON)