Справочник MOSFET. HM4953D

 

HM4953D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HM4953D
   Тип транзистора: MOSFET
   Полярность: P
   Максимальная рассеиваемая мощность (Pd): 2 W
   Предельно допустимое напряжение сток-исток |Uds|: 20 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
   Пороговое напряжение включения |Ugs(th)|: 2.5 V
   Максимально допустимый постоянный ток стока |Id|: 3 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 11.7 nC
   Время нарастания (tr): 10 ns
   Выходная емкость (Cd): 125 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.075 Ohm
   Тип корпуса: SO8 SOT23-6

 Аналог (замена) для HM4953D

 

 

HM4953D Datasheet (PDF)

 ..1. Size:2783K  cn hmsemi
 hm4953d.pdf

HM4953D HM4953D

Shenzhen H&M Semiconductor Co.Ltd http//www.hmsemi.com Shenzhen H&M Semiconductor Co.Ltd http//www.hmsemi.com Shenzhen H&M Semiconductor Co.Ltd http//www.hmsemi.com Shenzhen H&M Semiconductor Co.Ltd http//www.hmsemi.com

 8.1. Size:83K  chenmko
 chm4953jgp.pdf

HM4953D HM4953D

CHENMKO ENTERPRISE CO.,LTDCHM4953JGPSURFACE MOUNT Dual P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.9 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High

 8.2. Size:625K  cn hmsemi
 hm4953c.pdf

HM4953D HM4953D

HM4953C Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4953C uses advanced trench technology to provide D Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G Gload switch or in PWM applications. S SGENERAL FEATURES Schematic diagram VDS = -27V,ID = -5A RDS(ON)

 8.3. Size:763K  cn hmsemi
 hm4953b.pdf

HM4953D HM4953D

HM4953B Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4953B uses advanced trench technology to provide D Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G Gload switch or in PWM applications. S SGENERAL FEATURES Schematic diagram VDS = -20V,ID = -5A RDS(ON)

 8.4. Size:454K  cn hmsemi
 hm4953.pdf

HM4953D HM4953D

HM4953Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION D1D2The HM4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S1 S2Schematic diagram GENERAL FEATURES VDS = -30V,ID = -5.1A RDS(ON)

 8.5. Size:579K  cn hmsemi
 hm4953a.pdf

HM4953D HM4953D

HM4953ADual P-Channel Enhancement Mode Power MOSFET DESCRIPTION D1D2The HM4953A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S1 S2Schematic diagram GENERAL FEATURES VDS = -30V,ID = -5.1A RDS(ON)

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