HM603K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HM603K
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 2.6 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
   Paquete / Cubierta: TO252-4L

Búsqueda de reemplazo de MOSFET HM603K

HM603K Datasheet (PDF)

..1. Size:445K cn hmsemi
hm603k.pdf

HM N&P-Channel complementary Power MOSFET Description The HM603K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features N channel Schematic diagram VDS =60V,ID =20A RDS(ON)

9.1. Size:108K chenmko
chm6030lpagp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM6030LPAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 40 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power

9.2. Size:71K chenmko
chm6031lpagp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM6031LPAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 55 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power

9.3. Size:71K chenmko
chm603alpagp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM603ALPAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 20 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power

9.4. Size:1029K cn hmsemi
hm603ak.pdf

HM60 Dual N+P Enhancement MOSFETFeatures Package DimensionsTO-252-4Low On resistance.4.5V drive.RoHS compliant.SpecificationsAbsolute Maximum Ratings at T =250CaParameter Symbol Conditions N-Ch P-Ch UnitDrain-to-Source Voltage V 60 -60 VDSSGate-to-Source Voltage V +20 +20 VGSSDrain Current (DC) I 16 -12 ADDrain Current (Pulse) I PW10uS, duty cycle

9.5. Size:921K cn hmsemi
hm603bk.pdf

HM603BKDESCRIPTION The HM603BK is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as power management, where high-side switching,

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