HM603K - Даташиты. Аналоги. Основные параметры

HM N&P-Channel complementary Power MOSFET Description The HM603K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features N channel Schematic diagram VDS =60V,ID =20A RDS(ON)

CHENMKO ENTERPRISE CO.,LTD CHM6030LPAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 40 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High power

CHENMKO ENTERPRISE CO.,LTD CHM6031LPAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 55 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High power

CHENMKO ENTERPRISE CO.,LTD CHM603ALPAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 20 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High power

HM60 Dual N+P Enhancement MOSFET Features Package Dimensions TO-252-4 Low On resistance. 4.5V drive. RoHS compliant. Specifications Absolute Maximum Ratings at T =250C a Parameter Symbol Conditions N-Ch P-Ch Unit Drain-to-Source Voltage V 60 -60 V DSS Gate-to-Source Voltage V +20 +20 V GSS Drain Current (DC) I 16 -12 A D Drain Current (Pulse) I PW 10uS, duty cycle

HM603BK DESCRIPTION The HM603BK is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as power management, where high-side switching,