HM603K
MOSFET. Datasheet pdf. Equivalent
Type Designator: HM603K
Type of Transistor: MOSFET
Type of Control Channel: NP
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 20
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 25
nC
trⓘ - Rise Time: 2.6
nS
Cossⓘ -
Output Capacitance: 60
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035
Ohm
Package:
TO252-4L
HM603K
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM603K
Datasheet (PDF)
..1. Size:445K cn hmsemi
hm603k.pdf 
HM N&P-Channel complementary Power MOSFET Description The HM603K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features N channel Schematic diagram VDS =60V,ID =20A RDS(ON)
9.1. Size:108K chenmko
chm6030lpagp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM6030LPAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 40 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power
9.2. Size:71K chenmko
chm6031lpagp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM6031LPAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 55 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power
9.3. Size:71K chenmko
chm603alpagp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM603ALPAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 20 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power
9.4. Size:1029K cn hmsemi
hm603ak.pdf
HM60 Dual N+P Enhancement MOSFETFeatures Package DimensionsTO-252-4Low On resistance.4.5V drive.RoHS compliant.SpecificationsAbsolute Maximum Ratings at T =250CaParameter Symbol Conditions N-Ch P-Ch UnitDrain-to-Source Voltage V 60 -60 VDSSGate-to-Source Voltage V +20 +20 VGSSDrain Current (DC) I 16 -12 ADDrain Current (Pulse) I PW10uS, duty cycle
9.5. Size:921K cn hmsemi
hm603bk.pdf
HM603BKDESCRIPTION The HM603BK is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as power management, where high-side switching,
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