HM6604 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM6604 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.8 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.2 nS
Cossⓘ - Capacitancia de salida: 48 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm
Encapsulados: SOT23-6L
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HM6604 datasheet
hm6604.pdf
HM6604 N and P-Channel Enhancement Mode Power MOSFET Description The HM6604 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel N-channel P-channel VDS = 20V,ID =3A RDS(ON)
chm6601jgp.pdf
CHENMKO ENTERPRISE CO.,LTD CHM6601JGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 4.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High power
chm6601pagp.pdf
CHENMKO ENTERPRISE CO.,LTD CHM6601PAGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 16 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small flat package. ( TO-252 ) * High density cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * Rugged a
chm6607jgp.pdf
CHENMKO ENTERPRISE CO.,LTD CHM6607JGP SURFACE MOUNT Dual P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 3.8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High
Otros transistores... HM60N75K, HM610AK, HM640, HM6400, HM6401, HM6408, HM6409, HM6602, AOD4184A, HM6620, HM6800, HM6801, HM6803, HM6804, HM6804D, HM6N10, HM6N10PR
Parámetros del MOSFET. Cómo se afectan entre sí.
History: HM70N88 | IRF840SPBF
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