HM6604 - Даташиты. Аналоги. Основные параметры

HM6604N and P-Channel Enhancement Mode Power MOSFET Description The HM6604 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel N-channel P-channelVDS = 20V,ID =3A RDS(ON)

CHENMKO ENTERPRISE CO.,LTDCHM6601JGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 4.3 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power

CHENMKO ENTERPRISE CO.,LTDCHM6601PAGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 16 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small flat package. ( TO-252 )* High density cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* Rugged a

CHENMKO ENTERPRISE CO.,LTDCHM6607JGPSURFACE MOUNT Dual P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 3.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High

HM6602N and P-Channel Enhancement Mode Power MOSFET Description D1 D2The HM6602 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a Battery protection or in other Switching application.G1 G2S1 S2General Features N-channel P-channel N-Channel VDS = 30V,ID = 3.6A Schematic diagram RDS(ON)