HM6604 - Даташиты. Аналоги. Основные параметры
Наименование производителя: HM6604
Тип транзистора: MOSFET
Полярность: NP
Pd ⓘ - Максимальная рассеиваемая мощность: 0.8 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 3.2 ns
Cossⓘ - Выходная емкость: 48 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.065 Ohm
Тип корпуса: SOT23-6L
Аналог (замена) для HM6604
HM6604 Datasheet (PDF)
hm6604.pdf

HM6604N and P-Channel Enhancement Mode Power MOSFET Description The HM6604 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel N-channel P-channelVDS = 20V,ID =3A RDS(ON)
chm6601jgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM6601JGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 4.3 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power
chm6601pagp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM6601PAGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 16 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small flat package. ( TO-252 )* High density cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* Rugged a
chm6607jgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM6607JGPSURFACE MOUNT Dual P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 3.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High
Другие MOSFET... HM60N75K , HM610AK , HM640 , HM6400 , HM6401 , HM6408 , HM6409 , HM6602 , IRFP064N , HM6620 , HM6800 , HM6801 , HM6803 , HM6804 , HM6804D , HM6N10 , HM6N10PR .
History: DACMI120N120BZK | APT5010JVFR | APT30M19JVFR | FK7VS-12 | IRFP350R | HM8810S | IPP072N10N3G
History: DACMI120N120BZK | APT5010JVFR | APT30M19JVFR | FK7VS-12 | IRFP350R | HM8810S | IPP072N10N3G



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