All MOSFET. HM6604 Datasheet

 

HM6604 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM6604
   Marking Code: 20*
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 0.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2.9 nC
   trⓘ - Rise Time: 3.2 nS
   Cossⓘ - Output Capacitance: 48 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: SOT23-6L

 HM6604 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM6604 Datasheet (PDF)

 ..1. Size:783K  cn hmsemi
 hm6604.pdf

HM6604 HM6604

HM6604N and P-Channel Enhancement Mode Power MOSFET Description The HM6604 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel N-channel P-channelVDS = 20V,ID =3A RDS(ON)

 9.1. Size:92K  chenmko
 chm6601jgp.pdf

HM6604 HM6604

CHENMKO ENTERPRISE CO.,LTDCHM6601JGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 4.3 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power

 9.2. Size:73K  chenmko
 chm6601pagp.pdf

HM6604 HM6604

CHENMKO ENTERPRISE CO.,LTDCHM6601PAGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 16 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small flat package. ( TO-252 )* High density cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* Rugged a

 9.3. Size:92K  chenmko
 chm6607jgp.pdf

HM6604 HM6604

CHENMKO ENTERPRISE CO.,LTDCHM6607JGPSURFACE MOUNT Dual P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 3.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High

 9.4. Size:1547K  cn hmsemi
 hm6602.pdf

HM6604 HM6604

HM6602N and P-Channel Enhancement Mode Power MOSFET Description D1 D2The HM6602 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a Battery protection or in other Switching application.G1 G2S1 S2General Features N-channel P-channel N-Channel VDS = 30V,ID = 3.6A Schematic diagram RDS(ON)

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History: 2N5019 | IRFP048N

 

 
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