HM7N65I Todos los transistores

 

HM7N65I MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HM7N65I
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 48 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.35 Ohm
   Paquete / Cubierta: TO251

 Búsqueda de reemplazo de MOSFET HM7N65I

 

Principales características: HM7N65I

 ..1. Size:501K  cn hmsemi
 hm7n65k hm7n65i.pdf pdf_icon

HM7N65I

HM7N65K / HM7N65I HM7N65K / HM7N65I 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 7.0A, 650V, RDS(on) = 1.35 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 29nC) This advanced technology has been espe cially tailored to High ruggedness minimize o n-state r esistance, pr ovide superior sw

 8.1. Size:340K  cn hmsemi
 hm7n65 hm7n65f.pdf pdf_icon

HM7N65I

/ / 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 7.0A, 650V, RDS(on) = 1.26 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 29nC) This advanced technology has been espe cially tailored to High ruggedness minimize o n-state r esistance, pr ovide superio

 9.1. Size:666K  cn hmsemi
 hm7n60k hm7n60i.pdf pdf_icon

HM7N65I

HM7N60K / HM7N60I HM7N60K / HM7N60I 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 7.5A, 600V, RDS(on) = 1.20 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 29nC) This advanced technology has been especially tailored to High ruggedness minimize on-state resistance, provide superior switchin

 9.2. Size:324K  cn hmsemi
 hm7n60 hm7n60f.pdf pdf_icon

HM7N65I

HM7N60 / HM7N60F 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 7.5A, 600V, RDS(on) = 1.20 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 29nC) This advanced technology has been especially tailored to High ruggedness minimize on-state resistance, provide superior switching Fast switchin

MOSTRAR MÁS

Otros transistores... HM75N80D , HM7746K , HM7N60 , HM7N60F , HM7N60I , HM7N60K , HM7N65 , HM7N65F , TK10A60D , HM7N65K , HM7N80 , HM7N80D , HM7N80F , HM80N03 , HM80N03A , HM80N03I , HM80N03K .

History: MRF175GV | FBM85N80B | FCAB21520L1

 

 
Back to Top

 


 
.