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HM7N65I Spec and Replacement


   Type Designator: HM7N65I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.35 Ohm
   Package: TO251

 HM7N65I Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM7N65I Specs

 ..1. Size:501K  cn hmsemi
 hm7n65k hm7n65i.pdf pdf_icon

HM7N65I

HM7N65K / HM7N65I HM7N65K / HM7N65I 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 7.0A, 650V, RDS(on) = 1.35 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 29nC) This advanced technology has been espe cially tailored to High ruggedness minimize o n-state r esistance, pr ovide superior sw... See More ⇒

 8.1. Size:340K  cn hmsemi
 hm7n65 hm7n65f.pdf pdf_icon

HM7N65I

/ / 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 7.0A, 650V, RDS(on) = 1.26 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 29nC) This advanced technology has been espe cially tailored to High ruggedness minimize o n-state r esistance, pr ovide superio... See More ⇒

 9.1. Size:666K  cn hmsemi
 hm7n60k hm7n60i.pdf pdf_icon

HM7N65I

HM7N60K / HM7N60I HM7N60K / HM7N60I 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 7.5A, 600V, RDS(on) = 1.20 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 29nC) This advanced technology has been especially tailored to High ruggedness minimize on-state resistance, provide superior switchin... See More ⇒

 9.2. Size:324K  cn hmsemi
 hm7n60 hm7n60f.pdf pdf_icon

HM7N65I

HM7N60 / HM7N60F 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 7.5A, 600V, RDS(on) = 1.20 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 29nC) This advanced technology has been especially tailored to High ruggedness minimize on-state resistance, provide superior switching Fast switchin... See More ⇒

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Detailed specifications: HM75N80D , HM7746K , HM7N60 , HM7N60F , HM7N60I , HM7N60K , HM7N65 , HM7N65F , TK10A60D , HM7N65K , HM7N80 , HM7N80D , HM7N80F , HM80N03 , HM80N03A , HM80N03I , HM80N03K .

History: AP4406A | RJK0390DPA | JCS8N60C | UPA1981 | F4N60

Keywords - HM7N65I MOSFET specs

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