Справочник MOSFET. HM7N65I

 

HM7N65I Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: HM7N65I
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 48 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 50 ns
   Cossⓘ - Выходная емкость: 110 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.35 Ohm
   Тип корпуса: TO251
 

 Аналог (замена) для HM7N65I

   - подбор ⓘ MOSFET транзистора по параметрам

 

HM7N65I Datasheet (PDF)

 ..1. Size:501K  cn hmsemi
hm7n65k hm7n65i.pdfpdf_icon

HM7N65I

HM7N65K / HM7N65I HM7N65K / HM7N65I 650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 7.0A, 650V, RDS(on) = 1.35 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 29nC)This advanced technology has been espe cially tailored to High ruggednessminimize o n-state r esistance, pr ovide superior sw

 8.1. Size:340K  cn hmsemi
hm7n65 hm7n65f.pdfpdf_icon

HM7N65I

/ / 650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 7.0A, 650V, RDS(on) = 1.26 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 29nC)This advanced technology has been espe cially tailored to High ruggednessminimize o n-state r esistance, pr ovide superio

 9.1. Size:666K  cn hmsemi
hm7n60k hm7n60i.pdfpdf_icon

HM7N65I

HM7N60K / HM7N60IHM7N60K / HM7N60I600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 7.5A, 600V, RDS(on) = 1.20 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 29nC)This advanced technology has been especially tailored to High ruggednessminimize on-state resistance, provide superior switchin

 9.2. Size:324K  cn hmsemi
hm7n60 hm7n60f.pdfpdf_icon

HM7N65I

HM7N60 / HM7N60F600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 7.5A, 600V, RDS(on) = 1.20 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 29nC)This advanced technology has been especially tailored to High ruggednessminimize on-state resistance, provide superior switching Fast switchin

Другие MOSFET... HM75N80D , HM7746K , HM7N60 , HM7N60F , HM7N60I , HM7N60K , HM7N65 , HM7N65F , IRFZ24N , HM7N65K , HM7N80 , HM7N80D , HM7N80F , HM80N03 , HM80N03A , HM80N03I , HM80N03K .

History: AOI380A60C | MMIX1F132N50P3 | AM7304N | NCEP6060GU | BR10N60 | UTT40P04 | SPP15N65C3

 

 
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