HM7N65I datasheet, аналоги, основные параметры

Наименование производителя: HM7N65I  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 48 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 50 ns

Cossⓘ - Выходная емкость: 110 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.35 Ohm

Тип корпуса: TO251

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Аналог (замена) для HM7N65I

- подборⓘ MOSFET транзистора по параметрам

 

HM7N65I даташит

 ..1. Size:501K  cn hmsemi
 hm7n65k hm7n65i.pdf pdf_icon

HM7N65I

HM7N65K / HM7N65I HM7N65K / HM7N65I 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 7.0A, 650V, RDS(on) = 1.35 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 29nC) This advanced technology has been espe cially tailored to High ruggedness minimize o n-state r esistance, pr ovide superior sw

 8.1. Size:340K  cn hmsemi
 hm7n65 hm7n65f.pdf pdf_icon

HM7N65I

/ / 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 7.0A, 650V, RDS(on) = 1.26 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 29nC) This advanced technology has been espe cially tailored to High ruggedness minimize o n-state r esistance, pr ovide superio

 9.1. Size:666K  cn hmsemi
 hm7n60k hm7n60i.pdf pdf_icon

HM7N65I

HM7N60K / HM7N60I HM7N60K / HM7N60I 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 7.5A, 600V, RDS(on) = 1.20 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 29nC) This advanced technology has been especially tailored to High ruggedness minimize on-state resistance, provide superior switchin

 9.2. Size:324K  cn hmsemi
 hm7n60 hm7n60f.pdf pdf_icon

HM7N65I

HM7N60 / HM7N60F 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 7.5A, 600V, RDS(on) = 1.20 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 29nC) This advanced technology has been especially tailored to High ruggedness minimize on-state resistance, provide superior switching Fast switchin

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Другие IGBT... HM75N80D, HM7746K, HM7N60, HM7N60F, HM7N60I, HM7N60K, HM7N65, HM7N65F, STP80NF70, HM7N65K, HM7N80, HM7N80D, HM7N80F, HM80N03, HM80N03A, HM80N03I, HM80N03K