HM80N03I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HM80N03I
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 460 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm
   Paquete / Cubierta: TO251

Búsqueda de reemplazo de MOSFET HM80N03I

HM80N03I Datasheet (PDF)

..1. Size:602K cn hmsemi
hm80n03i.pdf

HM80N03IN-Channel Enhancement Mode Power MOSFET Description The HM80N03I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

7.1. Size:583K cn hmsemi
hm80n03.pdf

HM80N03N-Channel Enhancement Mode Power MOSFET Description The HM80N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

7.2. Size:511K cn hmsemi
hm80n03k.pdf

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

7.3. Size:674K cn hmsemi
hm80n03ka.pdf

HM80N03KAN-Channel Enhancement Mode Power MOSFET Description The HM80N03KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

7.4. Size:841K cn hmsemi
hm80n03a.pdf

HM80N03AN-Channel Enhancement Mode Power MOSFET Description The HM80N03A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: FCB110N65F

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