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HM80N03I Spec and Replacement


   Type Designator: HM80N03I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 460 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO251

 HM80N03I Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM80N03I Specs

 ..1. Size:602K  cn hmsemi
 hm80n03i.pdf pdf_icon

HM80N03I

HM80N03I N-Channel Enhancement Mode Power MOSFET Description The HM80N03I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON) ... See More ⇒

 7.1. Size:583K  cn hmsemi
 hm80n03.pdf pdf_icon

HM80N03I

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 7.2. Size:511K  cn hmsemi
 hm80n03k.pdf pdf_icon

HM80N03I

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON) ... See More ⇒

 7.3. Size:674K  cn hmsemi
 hm80n03ka.pdf pdf_icon

HM80N03I

HM80N03KA N-Channel Enhancement Mode Power MOSFET Description The HM80N03KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON) ... See More ⇒

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Detailed specifications: HM7N65F , HM7N65I , HM7N65K , HM7N80 , HM7N80D , HM7N80F , HM80N03 , HM80N03A , 10N65 , HM80N03K , HM80N03KA , HM80N04 , HM80N04K , HM80N05K , HM80N06K , HM80N06KA , HM80N08K .

History: RJK1562DJE | IXTP6N100D2 | RJK1529DPK | RJK2009DPM | IXTP96P085T | SSF20NS65 | STW55N10

Keywords - HM80N03I MOSFET specs

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