HM85N02K Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HM85N02K  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 60 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 85 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 17.2 nS

Cossⓘ - Capacitancia de salida: 500 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm

Encapsulados: TO252

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HM85N02K datasheet

 ..1. Size:699K  cn hmsemi
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HM85N02K

HM K Description The HM85N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =85A RDS(ON)

 7.1. Size:835K  cn hmsemi
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HM85N02K

HM85N02 Description The HM85N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =85A RDS(ON)

 9.1. Size:606K  cn hmsemi
hm85n95d.pdf pdf_icon

HM85N02K

HM85N95D N-Channel Enhancement Mode Power MOSFET Description The HM85N95D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =82V,ID =95A Schematic diagram RDS(ON)

 9.2. Size:539K  cn hmsemi
hm85n90.pdf pdf_icon

HM85N02K

HM85N90 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM85N90 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 82V,ID =90A RDS(ON)

Otros transistores... HM8205A, HM8205D, HM8205Q, HM830, HM830F, HM840, HM840F, HM85N02, FTP08N06A, HM85N80, HM85N90, HM85N95D, HM85P02, HM85P02D, HM85P02K, HM8810A, HM8810S