All MOSFET. HM85N02K Datasheet

 

HM85N02K Datasheet and Replacement


   Type Designator: HM85N02K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 85 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17.2 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO252
 

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HM85N02K Datasheet (PDF)

 ..1. Size:699K  cn hmsemi
 hm85n02k.pdf pdf_icon

HM85N02K

HM KDescription The HM85N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =85A RDS(ON)

 7.1. Size:835K  cn hmsemi
 hm85n02.pdf pdf_icon

HM85N02K

HM85N02Description The HM85N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =85A RDS(ON)

 9.1. Size:606K  cn hmsemi
 hm85n95d.pdf pdf_icon

HM85N02K

HM85N95DN-Channel Enhancement Mode Power MOSFET Description The HM85N95D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =82V,ID =95A Schematic diagram RDS(ON)

 9.2. Size:539K  cn hmsemi
 hm85n90.pdf pdf_icon

HM85N02K

HM85N90 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM85N90 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 82V,ID =90A RDS(ON)

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Datasheet: HM8205A , HM8205D , HM8205Q , HM830 , HM830F , HM840 , HM840F , HM85N02 , IRF1405 , HM85N80 , HM85N90 , HM85N95D , HM85P02 , HM85P02D , HM85P02K , HM8810A , HM8810S .

Keywords - HM85N02K MOSFET datasheet

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