HM85N02K Datasheet. Specs and Replacement

Type Designator: HM85N02K  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17.2 nS

Cossⓘ - Output Capacitance: 500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: TO252

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HM85N02K substitution

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HM85N02K datasheet

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HM85N02K

HM K Description The HM85N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =85A RDS(ON) ... See More ⇒

 7.1. Size:835K  cn hmsemi
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HM85N02K

HM85N02 Description The HM85N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =85A RDS(ON) ... See More ⇒

 9.1. Size:606K  cn hmsemi
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HM85N02K

HM85N95D N-Channel Enhancement Mode Power MOSFET Description The HM85N95D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =82V,ID =95A Schematic diagram RDS(ON) ... See More ⇒

 9.2. Size:539K  cn hmsemi
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HM85N02K

HM85N90 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM85N90 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 82V,ID =90A RDS(ON) ... See More ⇒

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Detailed specifications: HM8205A, HM8205D, HM8205Q, HM830, HM830F, HM840, HM840F, HM85N02, FTP08N06A, HM85N80, HM85N90, HM85N95D, HM85P02, HM85P02D, HM85P02K, HM8810A, HM8810S

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