Справочник MOSFET. HM85N02K

 

HM85N02K MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HM85N02K
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 60 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 85 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 17.2 ns
   Cossⓘ - Выходная емкость: 500 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0055 Ohm
   Тип корпуса: TO252

 Аналог (замена) для HM85N02K

 

 

HM85N02K Datasheet (PDF)

 ..1. Size:699K  cn hmsemi
 hm85n02k.pdf

HM85N02K HM85N02K

HM KDescription The HM85N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =85A RDS(ON)

 7.1. Size:835K  cn hmsemi
 hm85n02.pdf

HM85N02K HM85N02K

HM85N02Description The HM85N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =85A RDS(ON)

 9.1. Size:606K  cn hmsemi
 hm85n95d.pdf

HM85N02K HM85N02K

HM85N95DN-Channel Enhancement Mode Power MOSFET Description The HM85N95D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =82V,ID =95A Schematic diagram RDS(ON)

 9.2. Size:539K  cn hmsemi
 hm85n90.pdf

HM85N02K HM85N02K

HM85N90 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM85N90 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 82V,ID =90A RDS(ON)

 9.3. Size:504K  cn hmsemi
 hm85n80.pdf

HM85N02K HM85N02K

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =85V,ID =80A Schematic diagram RDS(ON)

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top