HMS200N04D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HMS200N04D  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 180 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 200 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 2123 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.001 Ohm

Encapsulados: DFN5X6-8L

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HMS200N04D datasheet

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HMS200N04D

HMS200N04D N-Channel Super Trench Power MOSFET Description The HMS200N04D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif

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HMS200N04D

HMS20N15K N-Channel Super Trench Power MOSFET Description The HMS20N15K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectific

Otros transistores... HMS170N03D, HMS17N65, HMS17N65D, HMS17N65F, HMS18N10D, HMS18N10Q, HMS18N80, HMS18N80F, BS170, HMS20N15K, HMS21N60, HMS21N60A, HMS21N60F, HMS21N65, HMS21N65A, HMS21N65F, HMS21N70