HMS200N04D MOSFET. Datasheet pdf. Equivalent
Type Designator: HMS200N04D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 200 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 137 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 2123 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.001 Ohm
Package: DFN5X6-8L
HMS200N04D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HMS200N04D Datasheet (PDF)
hms200n04d.pdf
HMS200N04DN-Channel Super Trench Power MOSFET Description The HMS200N04D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif
hms20n15k.pdf
HMS20N15KN-Channel Super Trench Power MOSFET Description The HMS20N15K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectific
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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