HMS200N04D Datasheet. Specs and Replacement

Type Designator: HMS200N04D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 200 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 2123 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.001 Ohm

Package: DFN5X6-8L

HMS200N04D substitution

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HMS200N04D datasheet

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HMS200N04D

HMS200N04D N-Channel Super Trench Power MOSFET Description The HMS200N04D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif... See More ⇒

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HMS200N04D

HMS20N15K N-Channel Super Trench Power MOSFET Description The HMS20N15K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectific... See More ⇒

Detailed specifications: HMS170N03D, HMS17N65, HMS17N65D, HMS17N65F, HMS18N10D, HMS18N10Q, HMS18N80, HMS18N80F, BS170, HMS20N15K, HMS21N60, HMS21N60A, HMS21N60F, HMS21N65, HMS21N65A, HMS21N65F, HMS21N70

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