HMS4294 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HMS4294
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 14 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9 nS
Cossⓘ - Capacitancia de salida: 354 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de HMS4294 MOSFET
HMS4294 Datasheet (PDF)
hms4294.pdf

N-Channel Super Trench Power MOSFET Description The HMS4294 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectificatio
hms4296.pdf

HMS4296N-Channel Super Trench Power MOSFET Description The uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectificatio
hms4290.pdf

HMS4290N-Channel Super Trench Power MOSFET Description The HMS4290 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectificatio
hms4296b.pdf

N-Channel Super Trench Power MOSFET Description The uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectificat
Otros transistores... HMS38N60T , HMS4030 , HMS4030D , HMS40N10D , HMS4110T , HMS4260 , HMS4264 , HMS4290 , 2SK3918 , HMS4296 , HMS4296B , HMS4438 , HMS4444A , HMS4454 , HMS45N15D , HMS45N15K , HMS47N60A .
History: QM4013D | NCE60P09K | PMN42XPE | IPD100N04S4L-02 | BUZ84 | BRCS120N03ZJ | HGA130N12SL
History: QM4013D | NCE60P09K | PMN42XPE | IPD100N04S4L-02 | BUZ84 | BRCS120N03ZJ | HGA130N12SL



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