All MOSFET. HMS4294 Datasheet

 

HMS4294 Datasheet and Replacement


   Type Designator: HMS4294
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 14 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 58 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 354 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: SOP8
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HMS4294 Datasheet (PDF)

 ..1. Size:593K  cn hmsemi
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HMS4294

N-Channel Super Trench Power MOSFET Description The HMS4294 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectificatio

 8.1. Size:553K  cn hmsemi
 hms4296.pdf pdf_icon

HMS4294

HMS4296N-Channel Super Trench Power MOSFET Description The uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectificatio

 8.2. Size:634K  cn hmsemi
 hms4290.pdf pdf_icon

HMS4294

HMS4290N-Channel Super Trench Power MOSFET Description The HMS4290 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectificatio

 8.3. Size:483K  cn hmsemi
 hms4296b.pdf pdf_icon

HMS4294

N-Channel Super Trench Power MOSFET Description The uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectificat

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History: VBZM630Y | AON6794 | IRFHM792PBF | BUZ84 | SSB65R090S2 | CED05N8 | BL10N70-A

Keywords - HMS4294 MOSFET datasheet

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