HMS4294 datasheet, аналоги, основные параметры
Наименование производителя: HMS4294 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 3.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 14 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 9 ns
Cossⓘ - Выходная емкость: 354 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.011 Ohm
Тип корпуса: SOP8
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Аналог (замена) для HMS4294
- подборⓘ MOSFET транзистора по параметрам
HMS4294 даташит
hms4294.pdf
N-Channel Super Trench Power MOSFET Description The HMS4294 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectificatio
hms4296.pdf
HMS4296 N-Channel Super Trench Power MOSFET Description The uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectificatio
hms4290.pdf
HMS4290 N-Channel Super Trench Power MOSFET Description The HMS4290 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectificatio
hms4296b.pdf
N-Channel Super Trench Power MOSFET Description The uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectificat
Другие IGBT... HMS38N60T, HMS4030, HMS4030D, HMS40N10D, HMS4110T, HMS4260, HMS4264, HMS4290, EMB04N03H, HMS4296, HMS4296B, HMS4438, HMS4444A, HMS4454, HMS45N15D, HMS45N15K, HMS47N60A
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