HMS80N85D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HMS80N85D  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 85 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 540 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0068 Ohm

Encapsulados: TO263

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HMS80N85D datasheet

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HMS80N85D

HMS80N85, HMS80N85D N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =8 V,ID =85A switching performance. Both conduction and switching power RDS(ON)=6.8m , typical (TO-220)@ VGS=10V losses are minimized due to an extremely lo

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HMS80N85D

HMS80N10KA N-Channel Super Trench Power MOSFET Description The HMS80N10AL uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif

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HMS80N85D

HMS80N10 N-Channel Super Trench Power MOSFET Description The HMS80N10 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectificat

 8.3. Size:574K  cn hmsemi
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HMS80N85D

HMS80N10AL N-Channel Super Trench Power MOSFET Description The uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif

MOSTRAR MÁS

Otros transistores... HMS7N70I, HMS7N70K, HMS80N06D, HMS80N10, HMS80N10AL, HMS80N10D, HMS80N10KA, HMS80N85, 7N65, HMS85N03ED, HMS85N95, HMS85N95D, HMS8N50I, HMS8N50K, HMS8N60, HMS8N60D, HMS8N60F