HMS80N85D - параметры транзистора MOSFET, его аналоги, datasheet

HMS80N85D Datasheet (PDF)

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HMS80N85, HMS80N85DN-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =8 V,ID =85A switching performance. Both conduction and switching power RDS(ON)=6.8m , typical (TO-220)@ VGS=10V losses are minimized due to an extremely lo

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HMS80N10KAN-Channel Super Trench Power MOSFET Description The HMS80N10AL uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif

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HMS80N10N-Channel Super Trench Power MOSFET Description The HMS80N10 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectificat

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HMS80N10ALN-Channel Super Trench Power MOSFET Description The uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif