HMS80N85D Datasheet. Specs and Replacement

Type Designator: HMS80N85D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 540 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm

Package: TO263

HMS80N85D substitution

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HMS80N85D datasheet

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HMS80N85D

HMS80N85, HMS80N85D N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =8 V,ID =85A switching performance. Both conduction and switching power RDS(ON)=6.8m , typical (TO-220)@ VGS=10V losses are minimized due to an extremely lo... See More ⇒

 8.1. Size:914K  cn hmsemi
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HMS80N85D

HMS80N10KA N-Channel Super Trench Power MOSFET Description The HMS80N10AL uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif... See More ⇒

 8.2. Size:995K  cn hmsemi
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HMS80N85D

HMS80N10 N-Channel Super Trench Power MOSFET Description The HMS80N10 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectificat... See More ⇒

 8.3. Size:574K  cn hmsemi
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HMS80N85D

HMS80N10AL N-Channel Super Trench Power MOSFET Description The uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif... See More ⇒

Detailed specifications: HMS7N70I, HMS7N70K, HMS80N06D, HMS80N10, HMS80N10AL, HMS80N10D, HMS80N10KA, HMS80N85, 7N65, HMS85N03ED, HMS85N95, HMS85N95D, HMS8N50I, HMS8N50K, HMS8N60, HMS8N60D, HMS8N60F

Keywords - HMS80N85D MOSFET specs

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