CSD30N70 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CSD30N70  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 60 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 55 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V

Qgⓘ - Carga de la puerta: 35 nC

trⓘ - Tiempo de subida: 26 nS

Cossⓘ - Capacitancia de salida: 195 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: TO252

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CSD30N70 datasheet

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CSD30N70

CSD30N70 N-Channel Trench Power MOSFET General Description The CSD30N70 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. Schematic Diagram Features VDS = 30V,ID =55A R

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 csd30n55.pdf pdf_icon

CSD30N70

CSD30N55 N-Channel Trench Power MOSFET General Description The CSD30N55 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 5V. This device is suitable for use as a wide variety of applications. Schematic Diagram Features VDS = 30V,ID =80A R

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CSD30N70

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor CSD30N30 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Load switch Power management ABSOLUTE MAXIMUM RATINGS(T =2

Otros transistores... HMS8N65K, HMS8N70, HMS8N70D, HMS8N70F, HMS8N70I, HMS8N70K, HMS90N04D, AO3413L, IRFB3607, FNK6075K, KMK1265F, ZM075N03D, YSP040N010T1A, YSK038N010T1A, YSF040N010T1A, 2SK741, DTM4415